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| STT6603 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-223 package. ID -2.5A RDS(ON) (m) Max 180 @ VGS=-10V 240 @ VGS=-4.5V D G S G SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -60 20 TA=25C TA=70C TA=25C TA=70C -2.5 -2.0 -20 a Units V V A A A W W C 2.08 1.33 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 60 C/W Details are subject to change without notice. Nov,17,2008 1 www.samhop.com.tw STT6603 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS= 20V , VDS=0V -1 100 uA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=-250uA VGS=-10V , ID=-2.5A VGS=-4.5V , ID=-2.2A VDS=-10V , ID=-2.5A -1.0 -2.0 90 120 6.4 -3 180 240 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-30V,VGS=0V f=1.0MHz 780 65 40 12.5 13 59.5 12 13.5 6.8 1.8 2.6 -2.0 -0.8 -1.2 VDD=-30V ID=-1A VGS=-10V RGEN=6 ohm VDS=-30V,ID=-2.5A,VGS=-10V VDS=-30V,ID=-2.5A,VGS=-4.5V VDS=-30V,ID=-2.5A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b A V VGS=0V,IS=-2A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Nov,17,2008 2 www.samhop.com.tw STT6603 Ver 1.0 10 V G S = -10V 15 -ID, Drain Current(A) V G S = -3.5V -ID, Drain Current(A) 8 V G S = -4V 12 6 9 4 V G S = -3V 6 25 C -55 C 2 3 0 125 C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.9 1.8 2.7 3.6 4.5 5.2 -VDS, Drain-to-Source Voltage(V) -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 240 Figure 2. Transfer Characteristics 2.0 RDS(on), On-Resistance Normalized 200 1.8 1.6 1.4 1.2 1.0 0 V G S =-4.5V ID= -2.2A V G S =-10V ID =-2.5A RDS(on)(m ) 160 VG S =-4.5V 120 80 40 1 VG S =-10V 1 2 4 6 8 10 0 25 50 75 100 125 150 T j ( C ) -ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 V DS =V G S ID=-250uA 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,17,2008 3 www.samhop.com.tw STT6603 Ver 1.0 300 250 20 -Is, Source-drain current(A) ID=-2.5A 10 125 C 25 C RDS(on)(m ) 200 125 C 150 100 75 C 50 0 25 C 75 C 0 2 4 6 8 10 1 0 0.3 0.6 0.9 1.2 1.5 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -VGS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) C is s 800 600 400 200 0 0 Cos s C rs s 5 10 15 20 25 30 8 6 4 2 0 0 VDS = -30V ID=-2.5A 2 4 6 8 10 12 14 16 -VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 600 Switching Time(ns) 100 60 10 -ID, Drain Current(A) TD(off) Tr 10 RD ON S( TD(on) )L im it 10 10 0m 1m s ms Tf 1 DC 1s s 0.1 1 1 V DS =-30V,ID=-1A V G S =-10V 6 10 60 100 300 600 0.01 0.1 V G S =-10V S ingle P ulse T c=25 C 1 10 100 300 Rg, Gate Resistance() -VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,17,2008 4 www.samhop.com.tw STT6603 Ver 1.0 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 1 0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 P DM t1 t2 0.01 Single Pulse 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) 10 100 1000 Figure 13. Normalized Thermal Transient Impedance Curve Nov,17,2008 5 www.samhop.com.tw STT6603 Ver 1.0 B C A D C 0.10 M C B C 0.080 TO-223 C1 (C) E E1 0.10 M C B b1 b SECTION B-B g 1 B B e e1 2 3 b 0.10 M C B C DETAIL "A" C1 b3 b2 (C) SECTION C-C GAUGE PLANE SEATING PLANE L 0.25 A2 A DETAIL "A" COMMON C A1 SYMBOL A A1 A2 b b1 b2 b3 g c c1 D E E1 e e1 L DIMENSIONS MILLIMETER MIN. MOM. MIN. 1.80 0.10 0.02 1.60 1.50 1.70 0.84 0.76 0.66 0.60 0.71 0.79 3.10 2.90 3.00 3.05 2.95 2.84 0.06 0.35 0.23 0.30 0.23 0.28 0.33 6.50 6.70 6.30 6.70 7.30 7.00 3.50 3.30 3.70 2.30 BSC 4.60 BSC 0.81 10 0 DIMENSIONS INCHE MIN. 0.0008 0.0591 0.0260 0.0236 0.1142 0.1118 0.0090 0.0090 0.2480 0.2638 0.1300 MOM. MAX. 0.0709 0.0039 0.0669 0.0330 0.0311 0.1220 0.1200 0.0020 0.1378 0.0130 0.2638 0.2874 0.1457 0.0630 0.0300 0.0280 0.1181 0.1161 0.1181 0.0110 0.2560 0.2760 0.1378 0.0906 BSC 0.1811 BSC 0.0319 0 10 Nov,17,2008 6 www.samhop.com.tw STT6603 Ver 1.0 SOT-223 Tape and Reel Data STO-223 Carrier Tape P0 D1 P1 P2 E1 E2 E D0 T K0 A0 B0 unit: PACKAGE A0 6.83 0.1 B0 7.42 0.1 K0 1.88 0.1 D0 1.50 + 0.25 D1 1.60 + 0.1 E 12.0 + 0.3 - 0.1 E1 1.75 0.1 E2 5.50 0.5 P0 8.0 0.1 P1 4.00 0.1 P2 2.00 0.05 T 0.292 0.02 STO-223 Reel UNIT: REEL SIZE 330 0.5 M N 97.0 1.0 W 2.2 W1 13.0 + 1.5 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R V Nov,17,2008 7 www.samhop.com.tw |
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